InstrumentOxford Instruments Plasmalab 80

Reactive ion etching is a common process in microelectronics to carve patterns into silicon or any other substrate material. At present we have Ar, O2 and SF6 gas for etching. Whether your material can be etched with this system will depend on the gases available and the selectivity between your substrate material and any standard mask. Determining the etch recipe takes time, so users should add this to their expected experimental time.

• Natalie Plank

  scps@vuw.ac.nz

• Kelburn Campus